Preparation of Chitin Nanofibers and Natural Rubber Composites and Their Triboelectric Nanogenerator Applications.

Triboelectric nanogenerators (TENGs) have gained significant attention as promising energy-harvesting devices that convert mechanical energy into electrical energy through charge separation induced by friction and electrostatic induction. In this study, we explore the utilization of biowaste shrimp shell-extracted chitin nanofiber (ChNF) as a viable eco-friendly material for TENG applications. Composite materials were prepared by incorporating ChNF into natural rubber (NRL) at loading levels of 0.1 and 0.2 wt% (NRL/ChNF) to form the TENG triboelectric layer. ChNFs with a uniform width of approximately 10-20 nm were successfully extracted from the shrimp shells through a simple mechanical procedure. The NRL/ChNF composites exhibited enhanced mechanical properties, as evidenced by a higher Young's modulus (3.4 GPa) compared to pure NRL. Additionally, the NRL/ChNF composites demonstrated an increased dielectric constant of 3.3 at 0.1 MHz. Moreover, the surface potential difference of NRL increased from 0.182 V to 1.987 V in the NRL/ChNF composite. When employed as the triboelectric layer in TENG, the NRL/ChNF composites exhibited significant improvement in their output voltage, with it reaching 106.04 ± 2.3 V. This enhancement can be attributed to the increased dielectric constant of NRL/ChNF, leading to enhanced charge exchange and charge density. This study presents a straightforward and environmentally friendly technique for preparing sustainable natural materials suitable for energy-harvesting devices.

Isothermal Growth and Stacking Evolution in Highly Uniform Bernal-Stacked Bilayer Graphene.

Controlling the stacking order in bilayer graphene (BLG) allows realizing interesting physical properties. In particular, the possibility of tuning the band gap in Bernal-stacked (AB) BLG (AB-BLG) has a great technological importance for electronic and optoelectronic applications. Most of the current methods to produce AB-BLG suffer from inhomogeneous layer thickness and/or coexistence with twisted BLG. Here, we demonstrate a method to synthesize highly pure large-area AB-BLG by chemical vapor deposition using Cu-Ni films. Increasing the reaction time resulted in a gradual increase of the AB stacking, with the BLG eventually free from twist regions for the longer growth times (99.4% of BLG has AB stacking), due to catalyst-assisted continuous BLG reconstruction driven by carbon dissolution-segregation processes. The band gap opening was confirmed by the electrical measurements on field-effect transistors using two different device configurations. The concept of the continuous reconstruction to achieve highly pure AB-BLG offers a way to control the stacking order of catalytically grown two-dimensional materials.

Electrically Inert h-BN/Bilayer Graphene Interface in All-Two-Dimensional Heterostructure Field Effect Transistors.

Bilayer graphene field effect transistors (BLG-FETs), unlike conventional semiconductors, are greatly sensitive to potential fluctuations because of the charged impurities in high- k gate stacks because the potential difference between two layers induced by the external perpendicular electrical filed is the physical origin behind the band gap opening. The assembly of BLG with layered h-BN insulators into a van der Waals heterostructure has been widely recognized to achieve the superior electrical transport properties. However, the carrier response properties at the h-BN/BLG heterointerface, which control the device performance, have not yet been revealed because of the inevitably large parasitic capacitance. In this study, the significant reduction of potential fluctuations to ∼1 meV is achieved in an all-two-dimensional heterostructure BLG-FET on a quartz substrate, which results in the suppression of the off-current to the measurement limit at a small band gap of ∼90 meV at 20 K. By capacitance measurement, we demonstrate that the electron trap/detrap response at such heterointerface is suppressed to undetectable level in the measurement frequency range. The electrically inert van der Waals heterointerface paves the way for the realization of future BLG electronics applications.